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SGL160N60UFD
IGBT
SGL160N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 80A High input impedance CO-PAK, IGBT with FRD: trr = 75nS (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
C
G
TO-264
G C E
TC = 25C unless otherwise noted
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC =100C @ TC = 25C @ TC = 100C
SGL160N60UFD 600 20 160 80 300 25 280 250 100 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.5 0.83 25 Units C/W C/W C/W
(c)2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
SGL160N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 80mA, VCE = VGE IC = 80A, VGE = 15V IC = 160A, VGE = 15V 3.5 --4.5 2.1 2.6 6.5 2.6 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---5000 600 200 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------40 101 90 75 2500 1760 4260 45 105 140 122 2785 3100 5885 345 60 95 18 --130 150 --5000 --200 250 ---520 100 150 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 80A, RG = 3.9, VGE=15V Inductive Load, TC = 25C
VCC = 300 V, IC = 80A, RG = 3.9, VGE = 15V Inductive Load, TC = 125C
VCE = 300 V, IC = 80A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 25A TC = 100C TC = 25C TC = 100C IF = 25A, di/ dt = 200 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 50 105 4.5 8.5 112 420
Max. 1.7 -95 -10 -375 --
Units V ns A nC
(c)2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
SGL160N60UFD
500 Common Emitter T C = 25 400 20V 15V 12V
240 Common Emitter V GE = 15V T C = 25 T C = 125
200
Collector Current, I C [A]
Collector Current, I C [A]
8
160
300
V GE = 10V
120
200
80
100
40
0 0 2 4 6
0 0.5 1 10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4
120 Common Emitter VGE = 15V 100
V CC = 300V Load Current : peak of square wave
Collector - Emitter Voltage, V [V] CE
3
160A
Load Current [A]
80
2
80A
60
IC = 40A 1
40
20
0 0 30 60 90 120 150
0
Duty cycle : 50% T C = 100 Power Dissipation = 130W 0.1 1 10 100 1000
Case Temperature, TC []
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter T C = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, V CE [V]
16
Collector - Emitter Voltage, VCE [V]
16
12
12
8
8
4 80A IC = 40A 0 0 4 8
160A
160A 4 IC = 40A 0 0 4 8 12 16 20 80A
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
(c)2002 Fairchild Semiconductor Corporation
Fig 7. Saturation Voltage vs. VGE
SGL160N60UFD Rev. B1
SGL160N60UFD
8000 7000 Cies 6000 Common Emitter VGE = 0V, f = 1MHz T C = 25
1000 Common Emitter VCC = 300V, VGE = 15V IC = 80A TC = 25 TC = 125
Ton
Capacitance [pF]
5000 4000 3000 2000 1000 0 1 Coes Cres
Switching Time [ns]
Tr
100
20 10 30 1 10 80
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G [ ]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
2000
10000 Common Emitter V CC = 300V, VGE = 15V IC = 80A T C = 25 T C = 125 Common Emitter V CC = 300V, V GE = 15V IC = 80A T C = 25 T C = 125
1000
Switching Time [ns]
Eon Eoff
Switching Loss [uJ]
Toff
Eoff
Tf 100 Tf
30 1 10 80
1000 1 10 80
Gate Resistance, R G []
Gate Resistance, R G [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
500
1000 Common Emitter VCC = 300V, V GE = 15V RG = 3.9 TC = 25 TC = 125 Toff Toff 100 Tf
Switching Time [ns]
100
Ton Common Emitter V CC = 300V, V GE = 15V RG = 3.9 T C = 25 T C = 125 40 60 80 100 120 140 160
Switching Time [ns]
Tr
Tf
10 20
20 20 40 60 80 100 120 140 160
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGL160N60UFD Rev. B1
SGL160N60UFD
20000 10000 Common Emitter V CC = 300V, V GE = 15V RG = 3.9 T C = 25 T C = 125
15 Common Emitter RL = 37.5 T C = 25
Gate - Emitter Voltage, VGE [ V ]
12
Switching Loss [uJ]
9 300 V 6 VCC = 100 V 3 200 V
1000
Eoff Eon 100 20 40 60 80 100 120 140 160
0 0 50 100 150 200 250 300 350
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
1000 IC MAX. (Pulsed) IC MAX. (Continuous) 100us 1 10 DC Operation
500
Collector Current, I C [A]
Collector Current, IC [A]
100
50us
100
10
1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE=20V, T C=100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristic
Fig 16. Turn-Off SOA Characteristics
1
0.5
Thermal Response [Zthjc]
0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1
SGL160N60UFD
100 100 T C = 25 T C = 100
Reverse Recovery Current, Irr [A]
Forward Current, I F [A]
V R = 200V IF = 25A T C = 25 T C = 100
10
10
1 0 1 2 3
1 100 1000
Forward Voltage Drop, V F [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
1000
120 VR = 200V IF = 25A TC = 25 TC = 100 VR = 200V IF = 25A TC = 25 TC = 100
Stored Recovery Charge, Q rr [nC]
800
Reverce Recovery Time, t rr [ns]
1000
100
600
80
400
60
200
40
0 100
20 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2002 Fairchild Semiconductor Corporation
SGL160N60UFD Rev. B1
SGL160N60UFD
Package Dimension
TO-264
6.00 0.20
20.00 0.20
(4.00)
(8.30)
(8.30)
(2.00)
(1.00)
(9.00)
(9.00)
(11.00)
(0.50)
20.00 0.20 2.50 0.10
1.50 0.20
(R1
(7.00)
(7.00)
4.90 0.20 (1.50) 2.50 0.20 (1.50) 3.00 0.20 1.00 -0.10
+0.25
(2.00)
20.00 0.50
(R 2.0
o3.3 0 0
.20
.00
0)
)
(1.50)
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.10
+0.25
2.80 0.30
5.00 0.20
3.50 0.20
(0.15)
(1.50)
(2.80)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation SGL160N60UFD Rev. B1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I1

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